Nanowires May Enable Smaller, High-Capacity Memory Devices

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Nanowires May Enable Smaller, High-Capacity Memory Devices

Description Jia Fu, Navab Singh and co-workers at the A*STAR Institute of Microelectronics in Singapore have developed a new type of nanowire-based memory—dubbed TAHOS—which may solve the problem of architectural limitations to downscaling to dimensions smaller than 45 nm.
Imported on 19 Jan 2010, 22:32
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